The 2SK1916 is an N-Channel enhancement mode power MOSFET produced by Inchange Semiconductor. It's engineered for high-voltage, high-speed switching applications, offering a balance of performance and robustness suitable for various power electronic circuits.

Applications

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supplies (UPS)
• DC-DC converters
• Electronic Ballasts

Features

• N-Channel Enhancement Mode MOSFET
• High Voltage Capability
• Low On-Resistance (RDS(on))
• Fast Switching Speed
• High Ruggedness

Benefits

• Enables high-efficiency power conversion due to the low RDS(on) and fast switching speed.
• Suitable for high-voltage applications, providing greater design flexibility.
• Reduces switching losses, resulting in improved overall efficiency.
• Offers enhanced reliability in harsh operating environments.
• Simplified gate drive requirements due to the enhancement mode operation.

Technical Specifications

Typical specifications for the 2SK1916 include:

• Drain-Source Voltage (VDSS): 900V
• Gate-Source Voltage (VGSS): ±30V
• Continuous Drain Current (ID): 3A
• Pulsed Drain Current (IDM): 9A
• RDS(on) @ VGS=10V: 4.5 Ohms
• Gate Charge (Qg): 8.5 nC
• Turn-on Delay Time: 8 ns
• Turn-off Delay Time: 15 ns

The 2SK1916 is commonly available in a TO-220 package. Always refer to the manufacturer's datasheet for detailed specifications, application notes, and safe operating area information.