The BUV11 is a high-voltage NPN silicon bipolar power transistor manufactured by Inchange Semiconductor Company Limited. This transistor is designed for use in various high-voltage switching and amplifier applications. It is commonly used in power supplies, inverters, and motor control circuits.

Applications

• Switching regulators
• Inverters
• Motor control
• High-voltage amplifiers
• Lighting ballasts

Features

• High breakdown voltage (VCBO = 350V)
• High collector current (IC = 10A)
• Low saturation voltage
• Fast switching speed
• High power dissipation capability

Benefits

• Efficient power conversion
• Reliable performance in high-voltage environments
• Reduced power loss
• Improved switching efficiency
• Robust performance under demanding conditions

The BUV11 features a collector-base voltage (VCBO) of 350V, a collector-emitter voltage (VCEO) of 300V, and an emitter-base voltage (VEBO) of 5V. It can handle a continuous collector current (IC) of 10A and a peak collector current (ICM) of 15A. The transistor has a power dissipation (PD) of 80W. It is available in a TO-220 package. The low saturation voltage ensures minimal power loss during switching. The fast switching speed enables efficient operation in high-frequency applications. The high power dissipation capability allows the transistor to handle large amounts of power without overheating. The device is specifically designed for high-voltage applications, ensuring reliable performance and long-term stability. The specific construction details and materials used are selected to maximize the transistor's performance and reliability in demanding applications.