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Same model may have multiple batches, images only for reference.
AUIRF7379QTR Infineon Technologies
Same model may have multiple batches, images only for reference.

AUIRF7379QTR

Part No AUIRF7379QTR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 5.8A 8SOIC
Datasheet
AUIRF7379QTR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A, 4.3A
Maximum Rds On at Id,Vgs 45 mOhm @ 5.8A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 520pF @ 25V
Maximum Power Dissipation 2.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1020727-AUIRF7379QTR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AUIRF7379QTR CAD Model

Description

The Infineon Technologies product with Win Source Part Number 1020727-AUIRF7379QTR is a Discrete Semiconductor Product.

  • Type: N and P-Channel FET with Logic Level Gate
  • Status: Active
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Maximum Power Dissipation: 2.5W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 5.8A and 4.3A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 520pF @ 25V
  • Maximum Rds On @ Id,Vgs: 45 mOhm @ 5.8A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.6921 $60.9973
31+ $3.8500 $119.3500
47+ $3.7296 $175.2912
64+ $3.6094 $231.0016
83+ $3.4890 $289.5870
111+ $3.1281 $347.2191
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Availability: 8,000 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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