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Same model may have multiple batches, images only for reference.
AUIRF7749L2TR Real Image
Same model may have multiple batches, images only for reference.

AUIRF7749L2TR

Part No AUIRF7749L2TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 36A DIRECTFET  /  N-Channel 60 V 36A (Ta), 345A (Tc) 3.8W (Ta), 341W (Tc) Surface Mount DirectFET™ Isometric L8
Datasheet
AUIRF7749L2TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 36A (Ta), 345A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 120A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 275 nC @ 10 V
Vgs (Max) 60V
Input Capacitance (Ciss) (Max) @ Vds 10655 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 341W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DirectFET™ Isometric L8
Package / Case DirectFET™ Isometric L8
Base Product Number AUIRF7749
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001521068,AUIRF7749L2DKR,AUIRF7749L2CT
Standard Package 4,000
Win Source Part Number 1133770-AUIRF7749L2TR
Ultra Librarian 3D Model Ultra Librarian AUIRF7749L2TR CAD Model

Description

The AUIRF7749L2TR is an N-channel MOSFET transistor from Infineon Technologies.

  • Drain-to-Source Voltage: 60 V
  • Continuous Drain Current @ 25°C (Ta): 36A
  • Continuous Drain Current @ 25°C (Tc): 345A
  • Maximum Rds On @ 120A and 10V: 1.5mOhm
  • Maximum Vgs(th) @ 250μA: 4V
  • Application: Designed for use in automotive applications
  • AEC-Q101 Qualified: Yes
  • Package: DirectFET Isometric L8
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation @ 25°C (Ta): 3.8W
  • Maximum Power Dissipation @ 25°C (Tc): 341W
  • Gate Charge (Qg) @ 10V: 275 nC
  • Input Capacitance (Ciss) @ 25V: 10655 pF
  • Summary: Reliable and efficient MOSFET transistor, ideal for use in a wide range of applications

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