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AUIRFR6215

Part No AUIRFR6215
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET P-CH 150V 13A DPAK / HEXFET® Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Packaging Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 295mOhm at 6.6A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 66nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 860pF at 25V
Power Dissipation (Maximum) 110W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813612-AUIRFR6215
Ultra Librarian 3D Model Ultra Librarian AUIRFR6215 CAD Model

Description

The Infineon Technologies 813612-AUIRFR6215 is a P-Channel MOSFET (Metal Oxide) FET Type electronic component.

  • Supplier Device Package: D-Pak
  • Drain to Source Voltage (Vdss): 150V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range - Operating: -55°C ~ 175°C
  • Power Dissipation (Maximum): 110W (Tc)
  • Popularity: Low
  • Supply and Demand Status: Limited
  • Rds On (Maximum) @ Id, Vgs: 295mOhm @ 6.6A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 66nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 860pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Vgs(th) (Maximum) @ Id: 4V @ 250μA
  • Maximum Vgs: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.5428 $53.1420
31+ $3.3143 $102.7433
47+ $3.2000 $150.4000
68+ $2.9714 $202.0552
88+ $2.8571 $251.4248
110+ $2.7429 $301.7190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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