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Same model may have multiple batches, images only for reference.
AUIRFR8403TRL Real Image
Same model may have multiple batches, images only for reference.

AUIRFR8403TRL

Part No AUIRFR8403TRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A DPAK
Datasheet
AUIRFR8403TRL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 100μA
Max Gate Charge 99nC @ 10V
Max Input Capacitance 3171pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 99W (Tc)
Maximum Rds On at Id,Vgs 3.1 mOhm @ 76A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020762-AUIRFR8403TRL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRFR8403TRL CAD Model

Description

The AUIRFR8403TRL is an N-Channel MOSFET designed for use in discrete semiconductor products manufactured by Infineon.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 100A
  • Maximum Rds On: 3.1 mOhm @ 76A and 10V
  • Gate-Source Threshold Voltage: 3.9V @ 100μA
  • Maximum Gate Charge: 99nC @ 10V
  • Maximum Input Capacitance: 3171pF @ 25V
  • Case: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Power Dissipation: 99W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)

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165+ $1.8182 $300.0030
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