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Same model may have multiple batches, images only for reference.
AUIRFS4010TRR
Same model may have multiple batches, images only for reference.

AUIRFS4010TRR

Part No AUIRFS4010TRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package D2PAK
Continuous Drain Current (ID) 180 A
Drain to Source Breakdown Voltage 100 V
Drain to Source Resistance 3.9 mΩ
Fall Time 77 ns
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 175 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Packaging Tape & Reel
Power Dissipation 375 W
Radiation Hardening No
Rise Time 86 ns
RoHS Compliant
Turn-Off Delay Time 100 ns
Turn-On Delay Time 21 ns
Win Source Part Number 1047089-AUIRFS4010TRR
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian AUIRFS4010TRR CAD Model

Description

The AUIRFS4010TRR is an N-channel MOSFET transistor manufactured by Infineon Technologies.

  • Maximum power dissipation: 375W
  • Drain-source breakdown voltage: 100V
  • Continuous drain current: 180A
  • Gate-source voltage: 20V
  • Package: D2PAK package
  • Standard package: tape and reel
  • Supply and demand status: shortage

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