The AUIRFS8405 is a N-Channel MOSFET transistor from Infineon Technologies.

• Series: It belongs to the HEXFET series of discrete semiconductor products.
• Drain to Source Voltage (Vdss): This MOSFET features a drain to source voltage (Vdss) of 40V
• Continuous Drain Current (Id): a continuous drain current (Id) of 120A @ 25°C.
• Maximum On-Resistance (Rds On): The maximum on-resistance (Rds On) is 2.3mOhm @ 100A and 10V gate-source voltage (Vgs).
• Gate Threshold Voltage (Vgs(th)): The gate threshold voltage (Vgs(th)) is 3.9V @ 100µA.
• Power Dissipation: With a maximum power dissipation of 163W, this MOSFET is suitable for high-power applications.
• Mounting and Package: It is designed for surface mount mounting and comes in a TO-263-3, D²Pak package.
• Gate Charge (Qg): The AUIRFS8405 has a gate charge (Qg) of 161nC @ 10V gate-source voltage (Vgs)
• Input Capacitance (Ciss): an input capacitance (Ciss) of 5193pF @ 25V drain-source voltage (Vds).
• Operating Temperature: It operates in a temperature range of -55°C to 175°C (TJ) and is compliant with ECCN EAR99 regulations.