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Same model may have multiple batches, images only for reference.
AUIRFZ48Z Real Image
Same model may have multiple batches, images only for reference.

AUIRFZ48Z

Part No AUIRFZ48Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 61A TO220AB
Datasheet
AUIRFZ48Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 1720pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 91W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 37A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1020792-AUIRFZ48Z
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AUIRFZ48Z CAD Model

Description

The Infineon Technologies AUIRFZ48Z is an N-channel MOSFET designed for through-hole mounting.

  • Channel Type: N-Channel
  • Mounting Type: Through-Hole
  • Maximum Power Dissipation: 91W (Tc)
  • Drive Voltage: 10V (max Rds On, min Rds On)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 61A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 64nC @ 10V
  • Maximum Input Capacitance: 1720pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 11 mOhm @ 37A, 10V
  • Product Category: Discrete Semiconductor Products
  • Product Status: Active
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220
  • Popularity: Medium
  • Supply and Demand: Sufficient

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115+ $0.8889 $102.2235
175+ $0.8611 $150.6925
245+ $0.8333 $204.1585
315+ $0.8056 $253.7640
420+ $0.7223 $303.3660
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