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Same model may have multiple batches, images only for reference.
BCP5316H6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BCP5316H6327XTSA1

Part No BCP5316H6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS PNP 80V 1A SOT223-4
Datasheet
BCP5316H6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Infineon Technologies
Series -
Package Tape & Reel
Product Status Last Time Buy
Transistor Type PNP
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V
Power - Max 2 W
Frequency - Transition 125MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4-24
Base Product Number BCP53
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1377972-BCP5316H6327XTSA1
Ultra Librarian 3D Model Ultra Librarian BCP5316H6327XTSA1 CAD Model

Description

The BCP5316H6327XTSA1 is a PNP bipolar transistor designed and manufactured by Infineon Technologies.

  • Transistor Type: PNP
  • Manufacturer: Infineon Technologies
  • Series: BCP53
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 125MHz

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