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BCR135WH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BCR135WH6327XTSA1

Part No BCR135WH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW SOT323-3
Datasheet
BCR135WH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 70 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 150MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Win Source Part Number 1022689-BCR135WH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCR135WH6327XTSA1 CAD Model

Description

The Infineon Technologies BCR135WH6327XTSA1 is a high-performance NPN pre-biased transistor designed for use in discrete semiconductor products.

  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE): 70 @ 5mA and 5V
  • Packaging: PG-SOT323-3
  • Power Dissipation (Max): 250mW
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
460+ $0.1411 $64.9060
980+ $0.1322 $129.5560
1,525+ $0.1276 $194.5900
2,185+ $0.1185 $258.9225
2,845+ $0.1138 $323.7610
3,555+ $0.1093 $388.5615
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 55,550 pieces
MOQ: 460 pcs
Order Increment : 1 pcs
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