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Same model may have multiple batches, images only for reference.
BCR35PNH6433 Real Image
Same model may have multiple batches, images only for reference.

BCR35PNH6433

Part No BCR35PNH6433
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description SMALL SIGNAL BIPOLAR TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr Infineon Technologies
Series Automotive, AEC-Q101
Package Bulk
Product Status Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 150MHz
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-6-1
Base Product Number BCR35
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 863878-BCR35PNH6433
Ultra Librarian 3D Model Ultra Librarian BCR35PNH6433 CAD Model

Description

The BCR35PNH6433 is a pre-biased bipolar transistor array from Infineon Technologies.

  • Mounting Type: Surface mount
  • Package: 6-VSSOP, SC-88, SOT-363
  • Transistor Configuration: 1 NPN and 1 PNP transistor
  • Maximum Power: 250 mW
  • Maximum Collector-Emitter Voltage: 50 V
  • Maximum Collector Current: 100 mA
  • DC Current Gain: 70 @ 5 mA and 5 V
  • Frequency Transition: 150 MHz
  • Package: Bulk
  • Quantity: 1 piece

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