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BFR183E6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BFR183E6327HTSA1

Part No BFR183E6327HTSA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description RF TRANS NPN 12V 8GHZ SOT23-3  /  RF Transistor NPN 12V 65mA 8GHz 450mW Surface Mount PG-SOT23
Datasheet
BFR183E6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr Infineon Technologies
Package Tape & Reel
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain 17.5dB
Power - Max 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA, 8V
Current - Collector (Ic) (Max) 65mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23
Base Product Number BFR183
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names BFR183E6327HTSA1TR,BFR 183 E6327,BFR 183 E6327CT,BFR 183 E6327DKR,INFINFBFR183E6327HTSA1,BFR183E6327,SP000011054,BFR183E6327HTSA1CT,2156-BFR183E6327HTSA1,BFR 183 E6327DKR-ND,BFR183E6327HTSA1DKR,BFR 183 E6327-ND,BFR183E6327XT,BFR 183 E6327CT-ND,BFR 183 E6327TR-ND,BFR183E6327BTSA1
Standard Package 3,000
Win Source Part Number 1048886-BFR183E6327HTSA1
Ultra Librarian 3D Model Ultra Librarian BFR183E6327HTSA1 CAD Model

Description

The Infineon Technologies BFR183E6327HTSA1 is an NPN bipolar transistor designed for use in RF transistors (BJT) applications.

  • Frequency Transition: 8 GHz
  • Gain: 17.5 dB
  • Noise Figure: 0.9 dB to 1.4 dB @ 900 MHz to 1.8 GHz
  • Maximum Power Dissipation: 450 mW
  • Package: 3-pin SOT-23-3
  • Compliance: Lead-free and RoHS compliant
  • Breakdown Voltage: 12 V
  • Maximum Collector Current: 65 mA
  • Suitable for: GSM, LTE, and W-CDMA applications

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