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BSB008NE2LXXUMA1

Part No BSB008NE2LXXUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 46A 2WDSON
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 46A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 343nC @ 10V
Max Input Capacitance 16000pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 0.8 mOhm @ 30A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package MG-WDSON-2, CanPAK M
Dimension 3-WDSON
Win Source Part Number 1024314-BSB008NE2LXXUMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSB008NE2LXXUMA1 CAD Model

Description

The Infineon Technologies BSB008NE2LXXUMA1 is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Product Name: BSB008NE2LXXUMA1
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 46A (Ta), 180A (Tc)
  • Maximum Rds On: 0.8 mOhm @ 30A, 10V
  • Gate-Source Voltage Threshold: 2V @ 250μA
  • Gate Charge: 343nC @ 10V
  • Input Capacitance: 16000pF @ 12V
  • Package: MG-WDSON-2, CanPAK M
  • Power Dissipation: 2.8W (Ta), 89W (Tc)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.5125 $62.5625
12+ $10.2667 $123.2004
18+ $9.9459 $179.0262
24+ $9.6251 $231.0024
32+ $9.3042 $297.7344
42+ $8.3416 $350.3472
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,050 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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