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Same model may have multiple batches, images only for reference.
BSC031N06NS3GATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSC031N06NS3GATMA1

Part No BSC031N06NS3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TDSON-8
Datasheet
BSC031N06NS3GATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 93μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 11000pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 139W (Tc)
Maximum Rds On at Id,Vgs 3.1 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 140103-BSC031N06NS3GATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC031N06NS3GATMA1 CAD Model

Description

BSC031N06NS3GATMA1

The BSC031N06NS3GATMA1 is a highly efficient N-channel MOSFET designed to meet modern electronic needs. Its state-of-the-art structure optimizes performance, leading to higher efficiency and reliability in various applications.

  • Voltage Rating: 60V
  • Current Rating: 0.031A
  • Compact Design

Applications:

  • Switching Power Supplies
  • Battery Management Systems
  • DC-DC Converters

Features and Benefits:

  • Low On-State Resistance, reducing energy loss
  • Fast Switching Speed for quick response
  • Enhanced Thermal Performance improving durability

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55+ $1.8184 $100.0120
86+ $1.7616 $151.4976
118+ $1.7047 $201.1546
152+ $1.6479 $250.4808
204+ $1.4774 $301.3896
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MOQ: 23 pcs
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