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BSC0702LSATMA1

Part No BSC0702LSATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A SUPERSO8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 49µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 30 V
FET Feature Standard
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
Base Product Number BSC0702
Standard Package 5,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 439073-BSC0702LSATMA1
Ultra Librarian 3D Model Ultra Librarian BSC0702LSATMA1 CAD Model

Description

The BSC0702LSATMA1 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: OptiMOS™
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 100A
  • On-Resistance (Rds On): 2.3mOhm @ 50A and 10V
  • Gate Threshold Voltage (Vgs(th)): 2.3V @ 49µA
  • Design: High power applications
  • Offers: Efficient switching performance
  • Suitable for: Use in various electronic devices such as power supplies, motor control, and lighting applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5356 $50.8820
230+ $0.4395 $101.0850
355+ $0.4257 $151.1235
490+ $0.4120 $201.8800
630+ $0.3983 $250.9290
845+ $0.3571 $301.7495
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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