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BSC0904NSI

Part No BSC0904NSI
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A 8TDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 1100pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 37W (Tc)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 012126-BSC0904NSI
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC0904NSI CAD Model

Description

Description

The BSC0904NSI is an advanced N-channel MOSFET that offers low power dissipation and high frequency operation. Its enhanced thermal performance is ideal for demanding applications requiring dependable power management.

Features and Benefits

  • Lower power dissipation
  • Enhanced high-frequency performance
  • Improved thermal conductivity
  • Smooth switching characteristics

Applications

  • Motor control
  • Power management systems
  • Inverters
  • Industrial automation

With its robust functionality, the BSC0904NSI is perfect for engineers aiming to enhance the performance and reliability of their electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5379 $51.1005
230+ $0.4414 $101.5220
355+ $0.4276 $151.7980
485+ $0.4138 $200.6930
625+ $0.4000 $250.0000
840+ $0.3586 $301.2240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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