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Same model may have multiple batches, images only for reference.
BSC200P03LSG Real Image
Same model may have multiple batches, images only for reference.

BSC200P03LSG

Part No BSC200P03LSG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS®
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9.9A (Ta), 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 48.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2430 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta), 63W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-6
Package / Case 8-PowerTDFN
Standard Package 693 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 819716-BSC200P03LSG
Ultra Librarian 3D Model Ultra Librarian BSC200P03LSG CAD Model

Description

The 819716-BSC200P03LSG is a P-Channel MOSFET transistor from Infineon Technologies.

  • Series: OptiMOS®
  • Applications: FETs and MOSFETs
  • Drain to source voltage (Vdss): 30V
  • Continuous drain current (Id): 9.9A @ 25°C
  • Rds On (Max): 20mOhm @ 12.5A and 10V
  • Gate charge (Qg): 48.5nC @ 10V
  • Package: 8-PowerTDFN

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.9055 $59.0550
24+ $4.8464 $116.3136
37+ $4.6951 $173.7187
51+ $4.5426 $231.6726
66+ $4.3913 $289.8258
89+ $3.9374 $350.4286
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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