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Same model may have multiple batches, images only for reference.
BSC882N03LS G Real Image
Same model may have multiple batches, images only for reference.

BSC882N03LS G

Part No BSC882N03LS G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™3 M
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 34 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 15 V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-6
Package / Case 8-PowerTDFN
Standard Package 702 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 717974-BSC882N03LS G
Ultra Librarian 3D Model Ultra Librarian BSC882N03LS G CAD Model

Description

The 717974-BSC882N03LS G is a single N-Channel MOSFET in the Transistors category.

  • Series: OptiMOS™3 M
  • Manufacturer: Infineon Technologies
  • Packaging: Bulk
  • Standard Package: 702 pieces
  • Mounting Type: Surface Mount
  • Drain-to-Source Voltage: 34V
  • Maximum On-Resistance: 4.2mΩ @ 30A, 10V
  • Threshold Voltage: 2.2V @ 250μA
  • Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 150°C
  • HTSUS Code: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.1873 $61.8730
23+ $5.0774 $116.7802
36+ $4.9180 $177.0480
49+ $4.7598 $233.2302
63+ $4.6015 $289.8945
85+ $4.1245 $350.5825
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Availability: 7,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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