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Same model may have multiple batches, images only for reference.
BSF045N03LQ3G
Same model may have multiple batches, images only for reference.

BSF045N03LQ3G

Part No BSF045N03LQ3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Contact for details
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 18 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 4.5 mΩ
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -40 °C
Power Dissipation 2.2 W
RoHS Compliant
Turn-Off Delay Time 20 ns
Win Source Part Number 1004524-BSF045N03LQ3G
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BSF045N03LQ3G CAD Model

Description

Infineon Technologies manufactures the BSF045N03LQ3G electronic component.

  • Category: FETs, MOSFETs - RF
  • Popularity: low popularity
  • RoHS Compliant: Yes
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -40 °C
  • Continuous Drain Current (ID): 18 A
  • Drain to Source Breakdown Voltage: 30 V
  • Turn-Off Delay Time: 20 ns
  • Drain to Source Resistance: 4.5 mΩ
  • Gate to Source Voltage (Vgs): 20 V

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