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Same model may have multiple batches, images only for reference.
BSL806NL6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSL806NL6327HTSA1

Part No BSL806NL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 2.3A 6TSOP
Datasheet
BSL806NL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.3A
Maximum Rds On at Id,Vgs 57 mOhm @ 2.3A, 2.5V
Gate-Source Threshold Voltage 750mV @ 11μA
Max Gate Charge 1.7nC @ 2.5V
Max Input Capacitance 259pF @ 10V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Win Source Part Number 1024404-BSL806NL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSL806NL6327HTSA1 CAD Model

Description

The Infineon Technologies 458754 is a Dual N-Channel MOSFET Integrated Circuit that can dissipate a maximum power of 500mW.

  • Package: PG-TSOP6-6
  • Mounted: SMD (SMT) technology
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.3A @ 25°C
  • Category: Discrete Semiconductor Products
  • Status: obsolete (EOL)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2707 $58.2005
525+ $0.2221 $116.6025
810+ $0.2152 $174.3120
1,110+ $0.2083 $231.2130
1,435+ $0.2014 $289.0090
1,920+ $0.1806 $346.7520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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