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BSO207PHXUMA1 Real Image1 BSO207PHXUMA1 Real Image2
Same model may have multiple batches, images only for reference.
BSO207PHXUMA1 Real Image1 BSO207PHXUMA1 Real Image2
BSO207PHXUMA1 Real Image1 BSO207PHXUMA1 Real Image2
Same model may have multiple batches, images only for reference.

BSO207PHXUMA1

Part No BSO207PHXUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 5A 8DSO
Datasheet
BSO207PHXUMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5A
Maximum Rds On at Id,Vgs 45 mOhm @ 5.7A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 44μA
Max Gate Charge 16nC @ 4.5V
Max Input Capacitance 1650pF @ 15V
Maximum Power Dissipation 1.6W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-DSO-8
Win Source Part Number 1024417-BSO207PHXUMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSO207PHXUMA1 CAD Model

Description

The Infineon Technologies BSO207PHXUMA1 is a P-Channel (Dual) FET with logic level gate feature and SMD (SMT) mounting.

  • Designed for: Discrete semiconductor products
  • Case/Package: PG-DSO-8
  • Maximum Power Dissipation: 1.6W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 5A
  • Gate-Source Threshold Voltage: 1.2V @ 44μA
  • Maximum Gate Charge: 16nC @ 4.5V
  • Maximum Input Capacitance: 1650pF @ 15V
  • Maximum Rds On: 45 mOhm @ 5.7A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6878 $58.4630
205+ $0.5645 $115.7225
320+ $0.5468 $174.9760
440+ $0.5291 $232.8040
565+ $0.5116 $289.0540
760+ $0.4585 $348.4600
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Availability: 36,200 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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