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Same model may have multiple batches, images only for reference.
BSO350N03 Real Image
Same model may have multiple batches, images only for reference.

BSO350N03

Part No BSO350N03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5A 8DSO
Datasheet
BSO350N03 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A
Maximum Rds On at Id,Vgs 35 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 2V @ 6μA
Max Gate Charge 3.7nC @ 5V
Max Input Capacitance 480pF @ 15V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-DSO-8
Win Source Part Number 131659-BSO350N03
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSO350N03 CAD Model

Description

Product Overview

The BSO350N03 is a robust N-channel MOSFET designed for high-performance applications. Leveraging advanced semiconductor technology, this component ensures efficient power management and system integration.

Features and Benefits

  • Low on-resistance for higher efficiency
  • High-speed switching capabilities
  • Rugged and reliable under challenging conditions
  • Thermal performance optimized for both discrete and integrated solutions

Applications and Projects

  • Power supply units
  • DC-DC converters
  • Motor control systems
  • Industrial automation projects

Additional Details

With its compact design, the BSO350N03 is ideal for miniaturized applications demanding energy efficiency and reliability, making it a preferred choice in modern power architectures.

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