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BSP171PH6327XTSA1

Part No BSP171PH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 1.9A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 460μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 460pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 300 mOhm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 103116-BSP171PH6327XTSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSP171PH6327XTSA1 CAD Model

Description

Product Description of BSP171PH6327XTSA1

The BSP171PH6327XTSA1 is a high-efficiency P-channel MOSFET, featuring low on-state resistance and fast switching capabilities. It is ideally suited for applications that require precise power control and compact component size.

Features and Benefits

  • Enhanced Thermal Performance
  • SOT-223 Package for easy integration
  • Low Threshold Voltage for efficient operations
  • Fast Switching

Applications

  • Load Switches
  • Power Management Circuits
  • Battery Charging Systems
  • Inverters

Additional Details: With its superior performance metrics, the BSP171PH6327XTSA1 facilitates high-efficiency solutions in cutting-edge electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3374 $50.6100
365+ $0.2769 $101.0685
560+ $0.2682 $150.1920
775+ $0.2596 $201.1900
1,000+ $0.2509 $250.9000
1,335+ $0.2250 $300.3750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,830 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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