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Same model may have multiple batches, images only for reference.
BSP298L6327HUSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSP298L6327HUSA1

Part No BSP298L6327HUSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 500MA SOT-223
Datasheet
BSP298L6327HUSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 3 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1024440-BSP298L6327HUSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSP298L6327HUSA1 CAD Model

Description

The Infineon Technologies 1024440-BSP298L6327HUSA1 is a MOSFET N-Channel transistor that comes in a PG-SOT223-4 package.

  • Component Type: MOSFET N-Channel Transistor
  • Package: PG-SOT223-4
  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current @ 25°C: 500mA (Ta)
  • Maximum Rds On @ Id, Vgs: 3 Ohm @ 500mA, 10V
  • Power Dissipation (Max): 1.8W (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Supply and Demand Status: Balanced

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