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BSP322PL6327 Real Image
Same model may have multiple batches, images only for reference.

BSP322PL6327

Part No BSP322PL6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 1V @ 380µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 372 pF @ 25 V
Power Dissipation (Max) 1.8W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4-21
Package / Case TO-261-4, TO-261AA
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 845914-BSP322PL6327
Ultra Librarian 3D Model Ultra Librarian BSP322PL6327 CAD Model

Description

The 845914-BSP322PL6327 is a P-Channel MOSFET (Metal Oxide) transistor from the SIPMOS™ series by Infineon Technologies.

  • Vdss: 100V
  • Id @ 25°C: 1A
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V
  • Package Type: Bulk
  • Standard Package: 1,000 pcs
  • Mounting Type: Surface Mount
  • Package: TO-261-4, TO-261AA
  • Qg (Max) @ Vgs: 16.5 nC @ 10 V
  • Ciss (Max) @ Vds: 372 pF @ 25 V
  • Operating Temperature: -55°C to 150°C
  • Product Status: Active

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