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Same model may have multiple batches, images only for reference.
BSP88L6327
Same model may have multiple batches, images only for reference.

BSP88L6327

Part No BSP88L6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 240 V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 95 pF @ 25 V
Power Dissipation (Max) 1.8W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4-21
Package / Case TO-261-4, TO-261AA
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 979441-BSP88L6327
Ultra Librarian 3D Model Ultra Librarian BSP88L6327 CAD Model

Description

The SIPMOS™ N-Channel MOSFET is a high-performance transistor designed for various applications in the field of discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 240V
  • Continuous Drain Current (Id): 350mA @ 25°C
  • Rds On (Max): 6Ohm @ 350mA and 10V
  • Gate Charge (Qg): 6.8nC @ 10V
  • Mounting Type: Surface Mount
  • Package: TO-261-4, TO-261AA
  • Operating Temperature Range: -55°C to 150°C
  • Manufacturer: Infineon Technologies

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