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Same model may have multiple batches, images only for reference.
BSR606NH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSR606NH6327XTSA1

Part No BSR606NH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.3A SC59
Datasheet
BSR606NH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 15μA
Max Gate Charge 5.6nC @ 5V
Max Input Capacitance 657pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 2.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SC-59
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024480-BSR606NH6327XTSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSR606NH6327XTSA1 CAD Model

Description

The BSR606NH6327XTSA1 is a N-Channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 2.3A @ 25°C.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 2.3A @ 25°C
  • Maximum Power Dissipation: 500mW (Ta)
  • Maximum Rds On: 60 mOhm @ Id,Vgs of 2.3A, 10V
  • Gate-Source Threshold Voltage: 2.3V @ 15μA
  • Maximum Gate Charge: 5.6nC @ 5V
  • Maximum Input Capacitance: 657pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-SC-59

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