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BSS126IXTSA1

Part No BSS126IXTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 21MA SOT23-3 / N-Channel 600 V 21mA (Ta) 500mW (Ta) Surface Mount PG-SOT23-3-5
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21mA (Ta)
Rds On (Max) @ Id, Vgs 500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id 1.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 21 pF @ 25 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT23-3-5
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number BSS126
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1355287-BSS126IXTSA1
Ultra Librarian 3D Model Ultra Librarian BSS126IXTSA1 CAD Model

Description

The BSS126IXTSA1 is an N-Channel MOSFET transistor from Infineon Technologies.

  • Series: SIPMOS®
  • Package: TO-236-3, SC-59, SOT-23-3
  • Vdss: 600V
  • Id (25°C): 21mA
  • Rds On: 500Ohm @ 16mA and 10V Vgs
  • Vgs(th): 1.6V @ 8µA
  • Qg: 1.4nC @ 5V Vgs
  • Ciss: 21pF @ 25V Vds
  • Mounting Type: Surface Mount
  • Power Dissipation: 500mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1311 $50.4735
930+ $0.1076 $100.0680
1,440+ $0.1042 $150.0480
1,985+ $0.1009 $200.2865
2,565+ $0.0975 $250.0875
3,435+ $0.0874 $300.2190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,538 pieces
MOQ: 385 pcs
Order Increment : 1 pcs
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