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BSS138NL6433HTMA1

Part No BSS138NL6433HTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 230MA SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 1.4nC @ 10V
Max Input Capacitance 41pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 3.5 Ohm @ 230mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024496-BSS138NL6433HTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS138NL6433HTMA1 CAD Model

Description

The Infineon Technologies BSS138NL6433HTMA1 is an N-channel MOSFET device with a maximum power dissipation of 360mW (Ta).

  • Maximum Power Dissipation: 360mW (Ta)
  • Supply and Demand: Balanced
  • Status: Obsolete (EOL)
  • Package: PG-SOT23-3
  • Dimension: TO-236-3, SC-59, SOT-23-3
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 230mA (Ta)
  • Maximum Rds On @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,060+ $0.0472 $50.0320
2,265+ $0.0442 $100.1130
3,515+ $0.0427 $150.0905
5,030+ $0.0398 $200.1940
6,530+ $0.0383 $250.0990
8,155+ $0.0368 $300.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 197,220 pieces
MOQ: 1060 pcs
Order Increment : 1 pcs
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