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BSS169 H6327

Part No BSS169 H6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1717+
Manufacturer Infineon Technologies
Manufacturer Homepage www.infineon.com
Win Source Part Number 744919-BSS169 H6327
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS169 H6327 CAD Model

Description

The BSS169 H6327 is a P-channel enhancement mode MOSFET manufactured by Infineon Technologies. It is designed for low voltage, low current switching applications. The 'H6327' likely denotes a specific manufacturing or traceability code.

Applications:

  • Small Signal Switching: Commonly used for switching low-level signals in electronic circuits.
  • Load Switching: Controls small loads in portable devices and other low-power applications.
  • Analog Switching: Can be used in analog switching circuits.
  • Power Management Circuits: Found in power management systems of small electronic devices.
  • Battery-Powered Devices: Well-suited for battery-powered devices due to its low gate charge.

Features:

  • P-Channel Enhancement Mode: Allows easy gate driving and control with a negative gate voltage.
  • Low Threshold Voltage: Requires a small gate voltage to turn on, ideal for low voltage applications.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses, improving efficiency.
  • Fast Switching Speed: Enables efficient operation in switching circuits.
  • Small Package Size: Typically available in SOT-23 or similar packages for compact designs.
  • Low Gate Charge: Reduces gate driving power requirements.

Benefits:

  • Efficient Switching: Low on-resistance and gate charge contribute to efficient switching performance.
  • Low Voltage Operation: Designed for applications with low supply voltages.
  • Compact Design: Small package size allows integration into space-constrained applications.
  • Reduced Power Consumption: Low gate charge reduces the power required to drive the MOSFET.
  • Simplified Circuit Design: P-channel configuration simplifies gate driving.

Additional Details:

The BSS169 H6327 offers a low gate threshold voltage, typically around 1V, making it suitable for circuits powered by batteries or other low-voltage sources. It exhibits low on-resistance to minimize power dissipation when conducting. The fast switching speed allows for efficient operation in high-frequency switching applications. The SOT-23 package is a common choice for this MOSFET, providing a small footprint for dense circuit board layouts. The 'H6327' marking is specific to Infineon and is used for internal tracking and quality control.

The BSS169 H6327 is an excellent choice for engineers looking for a low-voltage, low-current P-channel MOSFET for general-purpose switching applications, especially in portable and battery-powered devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
475+ $0.1062 $50.4450
1,010+ $0.0995 $100.4950
1,565+ $0.0961 $150.3965
2,240+ $0.0894 $200.2560
2,910+ $0.0860 $250.2600
3,630+ $0.0827 $300.2010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 454,780 pieces
MOQ: 475 pcs
Order Increment : 1 pcs
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