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BSS225H6327FTSA1

Part No BSS225H6327FTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 0.09A SOT-89 / Trans MOSFET N-CH 600V 0.09A Automotive 4-Pin(3+Tab) SOT-89 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series SIPMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.3V @ 94μA
Gate Charge (Qg) (Maximum) @ Vgs 5.8nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 131pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1W (Ta)
Rds On (Maximum) @ Id, Vgs 45 Ohm @ 90mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-SOT89
Package TO-243AA
Win Source Part Number 770434-BSS225H6327FTSA1
Popularity Medium
Supply and Demand Status Balance
Family Name BSS225
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian BSS225H6327FTSA1 CAD Model

Description

The BSS225H6327FTSA1 is a SIPMOS MOSFET designed by Infineon Technologies.

  • Current Continuous Drain (Id): 90mA (Ta)
  • Drain Source Voltage: 600V
  • Category: Discrete Semiconductor Products
  • Package: TO-243AA
  • REACH Regulations: Unaffected
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4433 $50.9795
275+ $0.3638 $100.0450
430+ $0.3524 $151.5320
590+ $0.3410 $201.1900
760+ $0.3297 $250.5720
1,015+ $0.2956 $300.0340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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