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BSS308PEH6327XTSA1

Part No BSS308PEH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2A SOT23
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 11μA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 500pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 80 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024518-BSS308PEH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS308PEH6327XTSA1 CAD Model

Description

The Infineon Technologies 1024518-BSS308PEH6327XTSA1 is a medium popularity electronic component that comes in a PG-SOT23-3 case/package.

  • Technology: P-Channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 2A (Ta)
  • Maximum Rds On @ Id,Vgs: 80 mOhm @ 2A, 10V
  • Max Gate Charge: 5nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
585+ $0.0856 $50.0760
1,250+ $0.0802 $100.2500
1,940+ $0.0775 $150.3500
2,780+ $0.0720 $200.1600
3,610+ $0.0693 $250.1730
4,505+ $0.0666 $300.0330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 578,050 pieces
MOQ: 585 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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