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BSZ0909NDXTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSZ0909NDXTMA1

Part No BSZ0909NDXTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 20A WISON-8  /  Mosfet Array 2 N-Channel (Dual) 30V 20A (Tc) 17W Surface Mount PG-WISON-8
Datasheet
BSZ0909NDXTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 15V
Power - Max 17W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerVDFN
Supplier Device Package PG-WISON-8
Base Product Number BSZ0909
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001637282,BSZ0909NDXTMA1CT,IFEINFBSZ0909NDXTMA1,2156-BSZ0909NDXTMA1,BSZ0909NDXTMA1TR,BSZ0909NDXTMA1DKR
Standard Package 5,000
Win Source Part Number 1049756-BSZ0909NDXTMA1
Ultra Librarian 3D Model Ultra Librarian BSZ0909NDXTMA1 CAD Model

Description

The BSZ0909NDXTMA1 is a dual N-channel MOSFET transistor array from Infineon Technologies.

  • Configuration: Dual MOSFETs in a single package
  • On-Resistance: 18mOhm @ 10V gate-source voltage
  • Maximum Drain-Source Voltage: 30V
  • Continuous Drain Current: 20A
  • Package: 8-PowerVDFN
  • Packaging: Tape and reel
  • Category: Discrete semiconductor products
  • Series: OptiMOS
  • Alternative Parts: BSZ0909ND

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Quantity Unit Price Ext. Price
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155+ $0.8621 $133.6255
235+ $0.8352 $196.2720
325+ $0.8082 $262.6650
415+ $0.7812 $324.1980
555+ $0.7003 $388.6665
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