The BUZ111S is a N-Channel MOSFET transistor from Infineon Technologies.

• Series and Package: It belongs to the SIPMOS series and comes in a TO-220-3 package.
• Voltage and Current: This MOSFET has a drain to source voltage (Vdss) of 55V and a continuous drain current (Id) of 80A @ 25°C.
• On-Resistance: The maximum on-resistance (Rds On) is 8mOhm @ 80A and 10V.
• Gate-Source Threshold Voltage: The gate-source threshold voltage (Vgs(th)) is 4V @ 240μA.
• Power Dissipation: With a maximum power dissipation of 300W, this MOSFET offers high performance and reliability.
• Temperature Range: It can operate in a wide temperature range from -55°C to 175°C.
• Applications: The BUZ111S is suitable for various applications in the field of discrete semiconductor products, such as power supplies, motor control, and switching circuits.