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Same model may have multiple batches, images only for reference.
BUZ30A H Infineon Technologies
Same model may have multiple batches, images only for reference.

BUZ30A H

Part No BUZ30A H
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 21A TO220-3
Datasheet
BUZ30A H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 130 mOhm @ 13.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1025467-BUZ30A H
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUZ30A H CAD Model

Description

The Infineon Technologies 434044 is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-source breakdown voltage: 200V
  • Continuous drain current @ 25°C: 21A
  • Maximum Rds On @ Id,Vgs: 130 mOhm @ 13.5A, 10V
  • Case: PG-TO-220-3
  • Temperature range: -55°C to 150°C
  • Maximum power dissipation: 125W (Tc)
  • Maximum gate-source voltage: ±20V
  • Gate-source threshold voltage: 4V @ 1mA
  • Maximum input capacitance: 1900pF @ 25V

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