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Same model may have multiple batches, images only for reference.
BUZ32 H Real Image
Same model may have multiple batches, images only for reference.

BUZ32 H

Part No BUZ32 H
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9.5A TO220-3
Datasheet
BUZ32 H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 133014-BUZ32 H
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian BUZ32 H CAD Model

Description

Product Overview

The BUZ32 H is a high-performance N-channel MOSFET that offers low gate charge and fast switching capabilities. It is designed for high efficiency in power management tasks, making it suitable for a variety of electronic applications.

Features and Benefits

  • Low gate charge for increased efficiency.
  • Fast switching to support high-frequency applications.
  • High thermal performance for reliable operation under various conditions.
  • Enhanced power handling capability.

Applications

  • Power converters
  • Inverter circuits
  • Battery protection circuits
  • Pulse circuits
  • Load switches

The BUZ32 H offers reliable performance and efficiency, making it a preferred choice for modern power electronic solutions.

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