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Same model may have multiple batches, images only for reference.
BYM300A120DN2HOSA1
Same model may have multiple batches, images only for reference.

BYM300A120DN2HOSA1

Part No BYM300A120DN2HOSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description IGBT MOD 1200V 450A 1000W
Datasheet
BYM300A120DN2HOSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr Infineon Technologies
Package Tray
Product Status Not For New Designs
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 450 A
Power - Max 1000 W
Input Standard
NTC Thermistor No
Temperature Range - Operating 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Base Product Number BYM300
Standard Package 10 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 846851-BYM300A120DN2HOSA1
Ultra Librarian 3D Model Ultra Librarian BYM300A120DN2HOSA1 CAD Model

Description

The BYM300A120DN2HOSA1 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-power applications.

  • Power Rating: 1000W
  • Collector Current (Ic): 450A
  • Collector-Emitter Breakdown Voltage (Vce): 1200V
  • Mounting Type: Chassis Mount
  • Package: Module
  • Operating Temperature: Up to 150°C
  • Manufacturer: Infineon Technologies

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