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Same model may have multiple batches, images only for reference.
IGT60R070D1ATMA4
Same model may have multiple batches, images only for reference.

IGT60R070D1ATMA4

Part No IGT60R070D1ATMA4
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description GANFET N-CH
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR);Cut Tape (CT)
Product Status Last Time Buy
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Vgs(th) (Max) @ Id 1.6V @ 2.6mA
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 400 V
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-3
Package / Case 8-PowerSFN
Ultra Librarian 3D Model Ultra Librarian IGT60R070D1ATMA4 CAD Model

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