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IHW30N135R3 Real Image
Same model may have multiple batches, images only for reference.

IHW30N135R3

Part No IHW30N135R3
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description REVERSE CONDUCTING IGBT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series TrenchStop™
Package Bulk
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1350 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 90 A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 30A
Power - Max 349 W
Switching Energy 1.93mJ (off)
Input Type Standard
Gate Charge 263 nC
Td (on/off) @ 25°C -/337ns
Test Condition 600V, 30A, 10Ohm, 15V
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Standard Package 88 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 602649-IHW30N135R3
Ultra Librarian 3D Model Ultra Librarian IHW30N135R3 CAD Model

Description

The IHW30N135R3 is a single IGBT transistor from Infineon Technologies.

  • Series: TrenchStop™
  • Maximum Power: 349W
  • Voltage Collector-Emitter Breakdown: 1350V
  • Maximum Collector Current (Ic): 60A
  • Vce(on): 1.85V @ Vge of 15V and Ic of 30A
  • Mounting Type: Through-hole
  • Package: TO-247-3
  • Gate Charge: 263nC
  • Operating Temperature: -40°C to 175°C
  • Product Status: Active

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