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Same model may have multiple batches, images only for reference.
IPA60R125P6 Real Image
Same model may have multiple batches, images only for reference.

IPA60R125P6

Part No IPA60R125P6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR
Datasheet
IPA60R125P6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2660 pF @ 100 V
Power Dissipation (Max) 34W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-111
Package / Case TO-220-3 Full Pack
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603289-IPA60R125P6
Ultra Librarian 3D Model Ultra Librarian IPA60R125P6 CAD Model

Description

The 603289-IPA60R125P6 is a N-Channel MOSFET transistor from Infineon Technologies. It belongs to the CoolMOS™ series, which is known for its high performance and reliability.

  • Vdss: 600V
  • Id @ 25°C: 30A
  • Rds On: 125mOhm @ 11.6A and 10V Vgs
  • Qg: 56nC @ 10V
  • Ciss: 2660pF @ 100V
  • Power Dissipation: 34W
  • Mounting Type: Through-hole
  • Package: TO-220-3 Full Pack
  • Product Status: Active
  • Manufacturer: Infineon Technologies

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28+ $3.6091 $101.0548
43+ $3.4963 $150.3409
60+ $3.3835 $203.0100
77+ $3.2707 $251.8439
103+ $2.9324 $302.0372
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Availability: 3,500 pieces
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