The Infineon Technologies IPA60R190E6 is an N-channel MOSFET with a maximum power dissipation of 34W @ Tc.

• Mounting Type: Through-Hole
• Package: PG-TO-220-FP
• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current: 20.2A @ 25°C
• Gate-Source Threshold Voltage: 3.5V @ 630μA
• Maximum Gate Charge: 63nC @ 10V
• Maximum Input Capacitance: 1400pF @ 100V
• Maximum Rds On: 190 mOhm @ 9.5A, 10V
• Status: Active
• Temperature Range: -55°C to 150°C
• Compliance: Halogen-Free
• Popularity: High
• Suitability: For use in a range of electronic devices