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Same model may have multiple batches, images only for reference.
IPA60R199CP Real Image
Same model may have multiple batches, images only for reference.

IPA60R199CP

Part No IPA60R199CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 16A TO220-3
Datasheet
IPA60R199CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.1mA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1520pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 199 mOhm @ 9.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 090896-IPA60R199CP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA60R199CP CAD Model

Description

The Infineon Technologies 090896-IPA60R199CP is an N-Channel MOSFET transistor with a drain-source voltage of 650V and continuous drain current of 16A (Tc).

  • Maximum Power Dissipation: 34W (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 1.1mA
  • Maximum Input Capacitance: 1520pF @ 100V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO-220-FP
  • Mounting Technology: Through-Hole

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40+ $2.9278 $117.1120
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146+ $2.3788 $347.3048
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