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Same model may have multiple batches, images only for reference.
IPA60R280P7XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPA60R280P7XKSA1

Part No IPA60R280P7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO220  /  N-Channel 600 V 12A (Tc) 24W (Tc) Through Hole PG-TO220-FP
Datasheet
IPA60R280P7XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 761 pF @ 400 V
Power Dissipation (Max) 24W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Base Product Number IPA60R280
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001658302,IFEINFIPA60R280P7XKSA1,2156-IPA60R280P7XKSA1
Standard Package 50
Win Source Part Number 1017163-IPA60R280P7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPA60R280P7XKSA1 CAD Model

Description

The IPA60R280P7XKSA1 is an N-Channel MOSFET transistor that is designed for use in power switching applications and is a part of the CoolMOS™ P7 series.

  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 190µA
  • Power Dissipation (Max): 24W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Vgs (Max): ±20V

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