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IPA65R420CFD

Part No IPA65R420CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 8.7A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 340μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 870pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 31.2W (Tc)
Maximum Rds On at Id,Vgs 420 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 205219-IPA65R420CFD
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA65R420CFD CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power MOSFET designed for various applications.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 8.7A (Tc)
  • Maximum Rds On @ Id, Vgs: 420 mOhm @ 3.4A, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 340μA
  • Maximum Gate Charge: 32nC @ 10V
  • Mounting: through hole
  • Packaging: Tube/Rail
  • Technology: MOSFET
  • Polarity: N-Channel
  • Power Dissipation (Max): 31.2W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Designed for: discrete semiconductor products
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: active
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,300 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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