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Same model may have multiple batches, images only for reference.
IPAW60R180P7SXKSA1
Same model may have multiple batches, images only for reference.

IPAW60R180P7SXKSA1

Part No IPAW60R180P7SXKSA1
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CHANNEL 650V 18A TO220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 400 V
Power Dissipation (Max) 26W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack
Ultra Librarian 3D Model Ultra Librarian IPAW60R180P7SXKSA1 CAD Model

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