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Same model may have multiple batches, images only for reference.
IPB034N06N3GATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB034N06N3GATMA1

Part No IPB034N06N3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TO263-7
Datasheet
IPB034N06N3GATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 93μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 11000pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 167W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-7
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 124513-IPB034N06N3GATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB034N06N3GATMA1 CAD Model

Description

The Infineon Technologies IPB034N06N3GATMA1 MOSFET is a powerful N-channel device that is ideal for use in a wide range of applications.

  • Type: N-channel MOSFET
  • Maximum Power Dissipation: 167W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 100A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 93μA
  • Maximum Gate Charge: 130nC @ 10V
  • Package: PG-TO263-7
  • Dimension: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Status: Obsolete (EOL)
  • Popularity: Medium

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