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Same model may have multiple batches, images only for reference.
IPB050N06NG Real Image
Same model may have multiple batches, images only for reference.

IPB050N06NG

Part No IPB050N06NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet N-ch 60V 100A TO-263
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-263
Continuous Drain Current (ID) 100 A
Current Rating 100 A
Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 5 mΩ
Drain to Source Voltage (Vdss) 60 V
Element Configuration Single
Fall Time 30 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 6.1 nF
Lead Free Yes
Maximum Operating Temperature 175 °C
Max Power Dissipation 300 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Power Dissipation 300 W
Rds On Max 4.7 mΩ
Rise Time 31 ns
RoHS Compliant
Turn-Off Delay Time 59 ns
Turn-On Delay Time 21 ns
Voltage Rating (DC) 60 V
Win Source Part Number 1065209-IPB050N06NG
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IPB050N06NG CAD Model

Description

The Infineon Technologies IPB050N06NG is a single element MOSFET transistor.

  • Maximum Voltage Rating: 60V
  • Current Rating: 100A
  • Package Type: TO-263
  • Mounting: Surface Mountable
  • Power Dissipation: 300W
  • Drain to Source Resistance: 5mΩ
  • Supply and Demand Status: Shortage
  • RoHS Compliant: Yes
  • Lead-Free: Yes

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