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IPB100N04S2-04

Part No IPB100N04S2-04
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPB100N04 - 20V-40V N-CHANNEL AU
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series *
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 172 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 78 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 603328-IPB100N04S2-04
Ultra Librarian 3D Model Ultra Librarian IPB100N04S2-04 CAD Model

Description

The Infineon Technologies 603328-IPB100N04S2-04 is an N-Channel MOSFET (Metal Oxide) transistor suitable for various applications.

  • Vdss: 40V
  • Id: 100A @ 25°C
  • Rds On: 3.3mOhm @ Id=80A, Vgs=10V
  • Vgs(th): 4V @ Id=250μA
  • Power Dissipation: 300W
  • Package: TO-263-3, D²Pak
  • Mounting: Surface Mounted
  • Qg: 172nC @ Vgs=10V
  • Ciss: 5300pF @ Vds=25V
  • Operating Temperature: -55°C to 175°C
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1945 $65.8350
65+ $1.8006 $117.0390
100+ $1.7452 $174.5200
140+ $1.6886 $236.4040
180+ $1.6320 $293.7600
240+ $1.4634 $351.2160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,770 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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