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Same model may have multiple batches, images only for reference.
IRL40B212 Real Image
Same model may have multiple batches, images only for reference.

IRL40B212

Part No IRL40B212
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 195A TO220AB  /  N-Channel 40 V 195A (Tc) 231W (Tc) Through Hole TO-220AB
Datasheet
IRL40B212 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series HEXFET®, StrongIRFET™
Package Tube
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8320 pF @ 25 V
Power Dissipation (Max) 231W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number IRL40B212
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-IRL40B212,SP001578760,INFIRFIRL40B212
Standard Package 1,000
Win Source Part Number 1065618-IRL40B212
Ultra Librarian 3D Model Ultra Librarian IRL40B212 CAD Model

Description

The IRL40B212 is an N-channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET and StrongIRFET
  • Drain to Source Voltage (Vdss): 40 V
  • Continuous Drain Current (Id): 195A @ 25°C
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 150μA
  • Power Dissipation (Max): 231W @ Tc
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220-3
  • Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V

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23+ $4.4755 $102.9365
35+ $4.3357 $151.7495
48+ $4.1958 $201.3984
62+ $4.0560 $251.4720
83+ $3.6364 $301.8212
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